Advances in Imaging and Electron Physics, Vol. 147 by Peter W. Hawkes PDF

By Peter W. Hawkes

ISBN-10: 0123739098

ISBN-13: 9780123739094

Advances in Imaging and Electron Physics merges long-running serials-Advances in Electronics and Electron Physics and Advances in Optical and Electron Microscopy. This sequence good points prolonged articles at the physics of electron units (especially semiconductor devices), particle optics at low and high energies, microlithography, photograph technological know-how and electronic photo processing, electromagnetic wave propagation, electron microscopy, and the computing equipment utilized in these kind of domain names

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Extra resources for Advances in Imaging and Electron Physics, Vol. 147

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EBIC, occasionally referred to as charge-collection microscopy (CCM), is an SEM- or STEM-based technique that also takes advantage of the beam injection of EHPs. However, in this case, the separation of EHPs, rather than their recombination as in CL, is of interest. A semiconductor sample that contains either a p–n junction or a Schottky junction has a strong internal electric field present in the “depletion region” of the junction. If EHPs are injected within this electric field, or if they are injected into the surrounding neutral regions and then diffuse to the depletion region, the field will drift the electrons and holes in opposite directions, sweeping the hole to the p-side and the electron to the n-side.

An important consequence of this treatment is that the minority carrier diffusion length L can be derived. This is the average distance traveled by a minority carrier during its lifetime, and is given as √ L = Dτ , (20) where D is the minority carrier diffusion coefficient and τ the overall minority carrier lifetime. L is an important semiconductor device-performance parameter, which is occasionally measured via CL. More important to the topic at hand, L is the factor by which injected carriers broaden from their injected profile.

2005) 44 PARISH AND RUSSELL mentioned previously, CL can be used to measure transient changes in bandstructure, in addition to purely luminescent processes. Merano et al. , 2005a, 2005b, 2006) have made the most exciting breakthroughs in time-resolved CL. C, but we will now discuss some of their results. 7-MHz repeat rate. This extremely short excitation pulse width allowed them to study the dynamics of carrier diffusion and recombination in nanostructures. , 2005b), they studied GaAs-based nanopyramids, as shown in Figure 24.

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